Institute of Innovative Research, 
Tokyo Institute of Technology.


Press Release

Revolutionizing Memory Technology: Multiferroic Nanodots for Low-Power Magnetic Storage

Cobalt-substituted BiFeO3 nanodots, engineered by Tokyo Tech researchers, demonstrate magnetoelectric-coupled ferroelectric and ferromagnetic single domain, offering significant promise for the advancement of low-power, nonvolatile magnetic memory devices. This innovation opens avenues for memory technologies where data can be written and read via electric and magnetic fields, respectively, thereby enhancing energy efficiency. This breakthrough can lead to the development of more energy-efficient memory technologies to meet the demands of modern electronic applications.