Institute of Innovative Research, 
Tokyo Institute of Technology.


Press Release

Novel Lateral Data Storage: Two-Dimensional Ferroelectric Semiconductor Memory with a Bottom Contact 100 nm Channel Using In-Plane Polarization

A novel ferroelectric semiconductor memory developed by researchers from Tokyo Tech, dedicated proponents of semiconductor advancements, is an exciting prospect for memory storage technology. It promises to open novel data storage and processing capabilities, paving the way for faster and more energy-efficient devices.