Institute of Innovative Research, 
Tokyo Institute of Technology.


Press Release

Exploring defects in nanoscale devices for possible quantum computing applications

Researchers at Tokyo Institute of Technology in collaboration with the University of Cambridge have studied the interaction between microwave fields and electronic defect states inside the oxide layer of field-effect transistors at cryogenic temperatures. It has been found that the physics of such defect states are consistent with driven two-level systems possessing long coherence times, and that their induced dynamics can be coherently and independently controlled. Due to the nature of this work, it is hoped that such results will contribute to the field of correlated electronic glassy dynamics in condensed matter physics; give a better understanding of charge noise effects in mesoscopic devices; and enable new studies for developing novel technologies in the important field of semiconductor-based quantum information processing.