2017.12.22
Viewing atomic structures of dopant atoms in 3D relating to electrical activity in a semiconductor
Scientists at Tokyo Tech and their research team involving researchers of JASRI, Osaka University, Nagoya Institute of Technology, and Nara Institute of Science and Technology have just developed a novel approach to determine and visualize the three-dimensional (3D) structure of individual dopant atoms using SPring-8outer. The technique will help improve the current understanding of the atomic structures of dopants in semiconductors correlated with their electrical activity and thus help support the development of new manufacturing processes for high-performance devices.
