Institute of Innovative Research, 
Tokyo Institute of Technology.


Press Release

Multiple Semiconductor Type Switching To Boost Thermoelectric Conversion of Waste Heat

Scientists at Tokyo Institute of Technology (Tokyo Tech) demonstrate double charge carrier type switching of tin monoselenide (SnSe) semiconductor by doping of antimony (Sb). The SnSe carrier type switches from p-type to n-type, and re-switches to p-type as doping increases, due to the switching of major Sb substitution site from Se to Sn, promising reliable charge polarity control, leading to realization of SnSe-based p/n homojunction thermoelectric device for converting waste heat into electricity and new insights on impurity doping of compound semiconductors.